Room temperature ferromagnetic properties of (Ga, Mn)N

Dilute magnetic semiconductor GaN with a Curie temperature above room tempe rature has been achieved by manganese doping. By varying the growth and ann ealing conditions of Mn-doped GaN we have identified Curie temperatures in the range of 228-370 K. These Mn-doped GaN films have ferromagnetic behavio r with hysteresis curves showing a coercivity of 100-500 Oe. Structure char acterization by x-ray diffraction and transmission electron microscopy indi cated that the ferromagnetic properties are not a result of secondary magne tic phases. (C) 2001 American Institute of Physics.