PbZr0.5Ti0.5O3/La0.5Sr0.5CoO3 heterostructures prepared by chemical solution routes on silicon with no fatigue polarization

PbZr0.5Ti0.5O3/La0.5Sr0.5CoO3 (PZT/LSCO) heterostructures have been grown d irectly on (100)Si by chemical solution routes. Field-emission scanning ele ctron microscopy and x-ray diffraction analysis show that PZT and LSCO thin films are polycrystalline and entirely perovskite phase. PZT thin films gr own on LSCO thin films showed no preferential orientation and excellent fer roelectricity. The remnant polarization P-r is about 22.8 muC/cm(2) and the coercive field E-c is about 95 kV/cm at an applied electric field of 400 k V/cm. The ferroelectric capacitor has been fabricated and showed no polariz ation fatigue after 3x10(9) fatigue cycles. The Pt/PZT/LSCO capacitor is su itable for nonvolatile random access memory application. (C) 2001 American Institute of Physics.