Size-induced lattice relaxation was observed for nanoscale CeO2 single crys
tals with an average size from 4 to 60 nm. Results showed the finest crysta
llites exhibited no strain-induced line broadening, while high temperature
annealing resulted in larger grain sizes and significant strains. The obser
ved shift in the x-ray diffraction lattice parameters was assumed to be due
to the formation of defects on the lattice, specifically oxygen vacancies.
Modeling revealed that the oxygen vacancy concentration ([V-O(. .)]) was f
ound to be approximate to 4x10(20)/cm(3) for the 4 nm crystallites, and dec
reased two orders of magnitude for larger 60 nm single crystals. (C) 2001 A
merican Institute of Physics.