Size-induced lattice relaxation in CeO2 nanoparticles

Citation
Xd. Zhou et W. Huebner, Size-induced lattice relaxation in CeO2 nanoparticles, APPL PHYS L, 79(21), 2001, pp. 3512-3514
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
79
Issue
21
Year of publication
2001
Pages
3512 - 3514
Database
ISI
SICI code
0003-6951(20011119)79:21<3512:SLRICN>2.0.ZU;2-0
Abstract
Size-induced lattice relaxation was observed for nanoscale CeO2 single crys tals with an average size from 4 to 60 nm. Results showed the finest crysta llites exhibited no strain-induced line broadening, while high temperature annealing resulted in larger grain sizes and significant strains. The obser ved shift in the x-ray diffraction lattice parameters was assumed to be due to the formation of defects on the lattice, specifically oxygen vacancies. Modeling revealed that the oxygen vacancy concentration ([V-O(. .)]) was f ound to be approximate to 4x10(20)/cm(3) for the 4 nm crystallites, and dec reased two orders of magnitude for larger 60 nm single crystals. (C) 2001 A merican Institute of Physics.