Nanostructuring with a high current isotope separator and ion implanter

Authors
Chini, TK Datta, D Bhattacharyya, SR Sanyal, MK
Citation
Tk. Chini et al., Nanostructuring with a high current isotope separator and ion implanter, APPL SURF S, 182(3-4), 2001, pp. 313-320
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
182
Issue
3-4
Year of publication
2001
Pages
313 - 320
Database
ISI
SICI code
0169-4332(20011022)182:3-4<313:NWAHCI>2.0.ZU;2-9
Abstract
The oblique angle Ar bombardment with a high current isotope separator and ion implanter gives rise to nanoscale (400-900 nm) ripple formation on Si(1 0 0) at 80 and 100 keV for the dose of 10(18) ions/cm(2). The most importa nt aspect of our preliminary investigation regarding the beam influencec on ripple wavelength indicates that the meaningful data comparable to the the oretical models can be obtained with homogeneous irradiation via beam sweep ing. At 60 keV, Ar bombarded GaAs surface also shows nanoparticle decorated ripples for the dose of 5 x 10(17) ions/cm(2) and at higher dose ripples w ithout nanoparticles. (C) 2001 Elsevier Science B.V. All rights reserved.