Characteristics of UHVCVD grown Si/Si1-x-yGexCy/Si quantum well heterostructure

Authors
Ray, SK Kar, GS Banerjee, SK
Citation
Sk. Ray et al., Characteristics of UHVCVD grown Si/Si1-x-yGexCy/Si quantum well heterostructure, APPL SURF S, 182(3-4), 2001, pp. 361-365
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
182
Issue
3-4
Year of publication
2001
Pages
361 - 365
Database
ISI
SICI code
0169-4332(20011022)182:3-4<361:COUGSQ>2.0.ZU;2-B
Abstract
Single well strained-layer Si1-x-yGexCy heterostructures have been grown by ultra-high vacuum chemical vapor deposition. The effect of addition of C o n strain and vibrational characteristics of Si1-xGex (y = 0) layer has been studied. The results of the carrier confinement characteristics, device tr ansconductance and optical transitions in a Si/SiGeC/Si quantum well are pr esented. (C) 2001 Published by Elsevier Science B.V.