Another rate-determining step in the CVD of copper

Authors
Citation
Ba. Kim et Hh. Lee, Another rate-determining step in the CVD of copper, CHEM VAPOR, 7(6), 2001, pp. 242
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
CHEMICAL VAPOR DEPOSITION
ISSN journal
09481907 → ACNP
Volume
7
Issue
6
Year of publication
2001
Database
ISI
SICI code
0948-1907(200111)7:6<242:ARSITC>2.0.ZU;2-7
Abstract
A shift in the rate-determining step of the MOCVD of copper is investigated . The involvement of two sources of ad-species in copper deposition with a Cu-I precursor is shown to change the rate-determining step. This is from a surface dissociation reaction of adsorbed precursor at relatively low pres sures to a decomposition of an ad-species generated in the gas phase at rel atively high pressures. A rate expression over the entire pressure range is given and compared with experimental data, and there is good agreement bet ween them.