A shift in the rate-determining step of the MOCVD of copper is investigated
. The involvement of two sources of ad-species in copper deposition with a
Cu-I precursor is shown to change the rate-determining step. This is from a
surface dissociation reaction of adsorbed precursor at relatively low pres
sures to a decomposition of an ad-species generated in the gas phase at rel
atively high pressures. A rate expression over the entire pressure range is
given and compared with experimental data, and there is good agreement bet
ween them.