A MODEL FOR HOT-ELECTRON AND HOT-HOLE INJECTION IN FLASH EEPROM PROGRAMMING

Authors
CONCANNON A MATHEWSON A PICCININI F MEI GL BEZ R LOMBARDI C
Citation
A. Concannon et al., A MODEL FOR HOT-ELECTRON AND HOT-HOLE INJECTION IN FLASH EEPROM PROGRAMMING, Microelectronics, 25(7), 1994, pp. 469-473
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Microelectronics → ACNP
ISSN journal
00262692
Volume
25
Issue
7
Year of publication
1994
Pages
469 - 473
Database
ISI
SICI code
0026-2692(1994)25:7<469:AMFHAH>2.0.ZU;2-#
Abstract
A new model for hot-electron and hot-hole injection is presented. The model has been integrated into a two-dimensional device simulator for the purpose of flash EEPROM programming simulation. The model is demon strated to be accurate over a range of floating gate voltages, by comp arison with measured data from flash EEPROM devices of different gate lengths under different programming conditions.