PLASMA-GROWN OXIDES ON SILICON WITH EXTREMELY LOW INTERFACE STATE DENSITIES

Authors
KENNEDY GP TAYLOR S ECCLESTON W UREN MJ
Citation
Gp. Kennedy et al., PLASMA-GROWN OXIDES ON SILICON WITH EXTREMELY LOW INTERFACE STATE DENSITIES, Microelectronics, 25(7), 1994, pp. 485-489
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Microelectronics → ACNP
ISSN journal
00262692
Volume
25
Issue
7
Year of publication
1994
Pages
485 - 489
Database
ISI
SICI code
0026-2692(1994)25:7<485:POOSWE>2.0.ZU;2-W
Abstract
Plasma-grown oxides on silicon with midgap interface state densities l ess than 10(10) cm(-2) eV(-1) have been obtained using low process tem peratures )<120 degrees C). Slow and fast interface state densities we re measured over a wide frequency range by two different techniques: t he quasi-static (CV) and the conductance (G(p)/w) methods. Careful att ention to system apparatus design, cleanliness and operation are thoug ht to be the main factors responsible for the low interface trap densi ties.