IMPACT OF FURNACE NITRIDATION TIME IN N2O AMBIENT ON THE QUALITY OF THE SI SIO2 SYSTEM/

Authors
LEBIHAN R ANDREBENOIT E PAPADAS C PIO F RIVA C
Citation
R. Lebihan et al., IMPACT OF FURNACE NITRIDATION TIME IN N2O AMBIENT ON THE QUALITY OF THE SI SIO2 SYSTEM/, Microelectronics, 25(7), 1994, pp. 577-582
Citations number
14
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Microelectronics → ACNP
ISSN journal
00262692
Volume
25
Issue
7
Year of publication
1994
Pages
577 - 582
Database
ISI
SICI code
0026-2692(1994)25:7<577:IOFNTI>2.0.ZU;2-H
Abstract
The impact of the furnace nitridation time in N2O ambient on the quali ty of the Si/SiO2 system is analyzed in detail. It is shown that, for a high temperature furnace nitridation process step, a long duration o f nitridation may give rise to degradation phenomena for MOS structure s grown on n-type Si, whereas this is not the case for MOS devices for med on p-type Si substrate. A qualitative model which explains this an omalous behaviour is also proposed.