Picosecond time-domain characterization of CPW bends using a photoconductive near-field mapping probe

Citation
J. Lee et al., Picosecond time-domain characterization of CPW bends using a photoconductive near-field mapping probe, IEEE MICR W, 11(11), 2001, pp. 453-455
Citations number
7
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
ISSN journal
15311309 → ACNP
Volume
11
Issue
11
Year of publication
2001
Pages
453 - 455
Database
ISI
SICI code
1531-1309(200111)11:11<453:PTCOCB>2.0.ZU;2-O
Abstract
Propagation and reflection characteristics of right-angle coplanar waveguid e (CPW) bends were measured using a novel photoconductive near-field probe with picosecond temporal resolution and mum spatial resolution. The probe c an measure the transverse electric-field components existing over devices u nder test. Time-varying transverse electric field maps for different CPW be nding structures were acquired by varying the probe position. The CSL mode generation and a difference in flight time of propagating pulses on two slo ts of the CPW bends were observed. Further, it was found that there exists a considerable unexpected pulse caused by the bent line structure, which ha s opposite polarity to the input pulse and exists only at the inner ground plane. The undesirable phenomena originated from the bend discontinuity wer e adequately reduced by bend smoothing techniques.