A plasticity-based model of material removal in chemical-mechanical polishing (CMP)

Citation
Gh. Fu et al., A plasticity-based model of material removal in chemical-mechanical polishing (CMP), IEEE SEMIC, 14(4), 2001, pp. 406-417
Citations number
52
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING
ISSN journal
08946507 → ACNP
Volume
14
Issue
4
Year of publication
2001
Pages
406 - 417
Database
ISI
SICI code
0894-6507(200111)14:4<406:APMOMR>2.0.ZU;2-B
Abstract
It is well known that the chemical reaction between an oxide layer and a wa ter-based slurry produces a softer hydroxylated interface layer. During che mical-mechanical polishing (CMP), it is assumed that material removal occur s by the plastic deformation of this interface layer. In this paper, the be havior of the hydroxylated layer is modeled as a perfectly plastic material , and a mechanistic model for material removal rate (MRR) in CMP is develop ed. The deformation profile of the soft pad is approximated as the bending of a thin elastic beam. In addition to the dependence of MRR on pressure an d relative velocity, the proposed plasticity-based model is also capable of delineating the effects of pad and slurry properties. The plasticity-based model is utilized to explore the effects of various design parameters (e.g ., abrasive shape, size and concentration, and pad stiffness) on the MRR. M odel predictions are compared with existing experimental observations from glass polishing, lapping, and CMP.