Citation
Y. Li et al., Quantum study of ultra-thin-base SiGe heterojunction bipolar transistor, INT J ELECT, 88(11), 2001, pp. 1141-1150
Citations number
10
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
INTERNATIONAL JOURNAL OF ELECTRONICS
ISSN journal
00207217
→ ACNP
Volume
88
Issue
11
Year of publication
2001
Pages
1141 - 1150
Database
ISI
SICI code
0020-7217(200111)88:11<1141:QSOUSH>2.0.ZU;2-X
Abstract
A quantum study has been carried out by solving the Schrodinger equation fo
r the ultra-thin-base in SiGe heterobipolar transistor. The results are com
pared with those of the Boltzmann model.