On the basis of the experimental reports, the mechanism of the second-order
susceptibility chi ((2)) for the thermal/electric field poling of fused si
lica is analyzed, and expressions for chi ((2)) are detailedly derived and
numerically calculated for the first time. By comparison the theoretical va
lue of chi ((2)) with the experiment results, we propose that the effective
chi ((2)) is created via both the interaction of the intense electric fiel
d with the third-order susceptibility chi ((3)) and the dipole orientation.
The theoretical results show that, in the differently applied voltage, the
dipole orientation and chi ((3)) play different role in the formation of c
hi ((2)). This theory successfully explains some experiment results.