Microstructure and electrical properties of lead zirconate titanate thin films deposited by excimer laser ablation

Citation
Zj. Wang et al., Microstructure and electrical properties of lead zirconate titanate thin films deposited by excimer laser ablation, JPN J A P 1, 40(9B), 2001, pp. 5523-5527
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
9B
Year of publication
2001
Pages
5523 - 5527
Database
ISI
SICI code
Abstract
Thin films of Pb(Zr0.52Ti0.48)O-3 (PZT) were prepared by excimer laser abla tion on a PtiTi/SiO2/Si substrate and were crystallized by subsequent annea ling at 750 degreesC for 90 min. Crystalline phases in the PZT films were i nvestigated by X-ray diffraction analysis. The microstructure and compositi on of the films were studied by transmission electron microscopy and energy dispersive X-ray spectroscopy, respectively. It is found that the films co nsist almost entirely of the perovskite phase, but a thin layer of the pyro chlore phase exists at the surface of the films. Electrical properties of t hese films were evaluated by measuring P-E hysteresis loops and dielectric constants. The remanent polarization and the coercive field of the films we re 23.9 muC/cm(2) and 60.5 kV/cm, respectively, while the dielectric consta nt and loss values measured at 1 kHz were approximately 950 and 0.04, respe ctively. The effect of the microstructure on the electrical properties of t he PZT thin films is discussed.