Zj. Wang et al., Microstructure and electrical properties of lead zirconate titanate thin films deposited by excimer laser ablation, JPN J A P 1, 40(9B), 2001, pp. 5523-5527
Thin films of Pb(Zr0.52Ti0.48)O-3 (PZT) were prepared by excimer laser abla
tion on a PtiTi/SiO2/Si substrate and were crystallized by subsequent annea
ling at 750 degreesC for 90 min. Crystalline phases in the PZT films were i
nvestigated by X-ray diffraction analysis. The microstructure and compositi
on of the films were studied by transmission electron microscopy and energy
dispersive X-ray spectroscopy, respectively. It is found that the films co
nsist almost entirely of the perovskite phase, but a thin layer of the pyro
chlore phase exists at the surface of the films. Electrical properties of t
hese films were evaluated by measuring P-E hysteresis loops and dielectric
constants. The remanent polarization and the coercive field of the films we
re 23.9 muC/cm(2) and 60.5 kV/cm, respectively, while the dielectric consta
nt and loss values measured at 1 kHz were approximately 950 and 0.04, respe
ctively. The effect of the microstructure on the electrical properties of t
he PZT thin films is discussed.