Sol-gel derived ferroelectric Pb(Zr1-xTix)O-3-SiO2-B2O3 glass-ceramic thinfilms formed at relatively low annealing temperatures

Ferroelectric PZT(PbZr0.52Ti0.48O3)-5 Mol%SiO2-1 mol%B2O3 glass-ceramic thi n films were fabricated by sol-gel and rapid thermal annealing (RTA) techni ques on PtM/SiO2/Si(100) substrates at a relatively low annealing temperatu re of 650 degreesC. The perovskite-phase PZT crystallites grew in the films and were preferentially oriented in the (111) direction. The PZT crystalli zation temperature was lower in the PZT-SiO2-B2O3 system, compared to that in PZT-SiO2 and pure PZT. The dielectric constant and loss, remnant polariz ation, and leakage current of the films annealed at temperatures ranging fr om 650 to 700 degreesC were lower than those of pure PZT.