Low-temperature fabrication of Ir/Pb(ZrTi)O-3/Ir capacitors solely by metalorganic chemical vapor deposition

Ir/Pb(Zr,Ti)O-3(PZT)/Ir capacitors were fabricated solely by metalorganic c hemical vapor deposition (MOCVD). Both top and bottom Ir electrodes with mi rror like surfaces were obtained at 300 degreesC by MOCVD. Ferroelectric PZ T thin films were successfully prepared at 395-540 degreesC by MOCVD using (C2H5)(3)PbOCH2C(CH3)(3) as a Pb precursor and PbTiO3 as a seed. Both Ir el ectrodes and PZT thin films showed good step coverage of 70-80%. PZT films prepared at 445-540 degreesC exhibited well-saturated hysteresis loops with remanent polarization of 19-25 muC/cm(2).