Preparation of Bi4Ti3O12/Bi2SiO5/Si structures derived by metal organic decomposition technique

Bismuth titanate (Bi4Ti3O12) thin films were fabricated on a bismuth silica te (Bi2SiO5)-coated silicon substrate by the metalorganic decomposition (MO D) method. It was confirmed that the resultant films were single-phase Bi4T i3O12 thin films with c-axis-dominant orientation. However, the fabricated films have a high leakage current density of approximately 10(4) A.cm(-2). It is considered that this is mainly caused by the surface roughness due to the growth of plate-like grains. The growth of the Bi4Ti3O12 thin films us ing the MOD method is influenced by the substrate. Therefore, it is regarde d that the addition of Bi2SiO5 thin film improves the crystallinity of Bi4T i3O12 thin films.