Electronic structure of Bi4Ti3O12 thin film by soft-X-ray emission spectroscopy

Authors
Higuchi, T Tanaka, M Kudoh, K Takeuchi, T Harada, Y Shin, S Tsukamoto, T
Citation
T. Higuchi et al., Electronic structure of Bi4Ti3O12 thin film by soft-X-ray emission spectroscopy, JPN J A P 1, 40(9B), 2001, pp. 5803-5805
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
40
Issue
9B
Year of publication
2001
Pages
5803 - 5805
Database
ISI
SICI code
Abstract
The electronic structure of a ferroelectric Bi4Ti3O12 (BIT) thin film was i nvestigated by soft-X-ray emission spectroscopy (SXES). In the valence band energy region, Ti 3d and O 2p partial density of states were observed in O Is and Ti 2p SXES spectra. The energy position of the Ti 3d state overlapp ed with that of the 0 2p state. This finding indicates that the 0 2p state strongly hybridizes with the Ti 3d state in the valence band.