Growth of InxGa1-xAs quantum dots by metal-organic chemical vapor deposition on Si substrates and in GaAs-based lasers

The growth conditions of low-dimensional dot structures of strained InxGa1- xAs on Si substrates using the Stranski-Krastanov growth mode by metal-orga nic chemical vapor deposition are optimized. Atomic force microscopy measur ement has been performed to characterize the dot structures. The dot densit y and their size are found to be strongly dependent on the substrate temper ature, In content, and V/III ratio. The optimized growth condition was furt her used to fabricate quantum dot-like laser diodes on Si. The characterist ics of the laser diode with an InxGa1-xAs quantum dot-like active region ar e analyzed. (C) 2001 American Institute of Physics.