Photoluminescence properties of MgxZn1-xO alloy thin films fabricated by the sol-gel deposition method

The photoluminescence properties of MgxZn1-xO alloy thin films fabricated b y the sol-gel deposition method were studied. The Mg2+ content in the films was up to 0.36 and they had the ZnO wurtzite structure. The band gap of th e films can be controlled between 3.40 and 3.93 eV by adjusting the Mg2+ pr oportions. Transmittance spectroscopy was used to characterize the excitoni c structure of the alloys, which the excitonic character is clearly visible at room temperature. The intense ultraviolet photoluminescence was observe d at room temperature. This emission is indicative of the excitonic nature of the material. (C) 2001 American Institute of Physics.