Wk. Choi et al., Spectroscopic ellipsometry and electrical studies of as-grown and rapid thermal oxidized Si1-x-yGexCy films, J APPL PHYS, 90(11), 2001, pp. 5819-5824
Transmission electron microscopy results showed the formation of SiC precip
itation in a rapid thermally oxidized (RTO) Si1-x-yGexCy sample with high-C
content. The spectroscopic ellipsometry results showed that the E-1 gap in
creased and E-2 gap decreased as the C concentration increased. For the oxi
dized samples, the amplitude of the E-2 transitions reduced rapidly and the
E-1 transition shifted to a lower energy. The reduction in the E-2 transit
ions was due to the presence of the oxide layer. A high-Ge content layer an
d the low-C content in the RTO films accounted for the E-1 shift to lower e
nergy. The electrical measurements showed that RTO at 800 degreesC did not
improve the oxide quality as compared to 1000 degreesC. (C) 2001 American I
nstitute of Physics.