Spectroscopic ellipsometry and electrical studies of as-grown and rapid thermal oxidized Si1-x-yGexCy films

Citation
Wk. Choi et al., Spectroscopic ellipsometry and electrical studies of as-grown and rapid thermal oxidized Si1-x-yGexCy films, J APPL PHYS, 90(11), 2001, pp. 5819-5824
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
90
Issue
11
Year of publication
2001
Pages
5819 - 5824
Database
ISI
SICI code
0021-8979(200112)90:11<5819:SEAESO>2.0.ZU;2-S
Abstract
Transmission electron microscopy results showed the formation of SiC precip itation in a rapid thermally oxidized (RTO) Si1-x-yGexCy sample with high-C content. The spectroscopic ellipsometry results showed that the E-1 gap in creased and E-2 gap decreased as the C concentration increased. For the oxi dized samples, the amplitude of the E-2 transitions reduced rapidly and the E-1 transition shifted to a lower energy. The reduction in the E-2 transit ions was due to the presence of the oxide layer. A high-Ge content layer an d the low-C content in the RTO films accounted for the E-1 shift to lower e nergy. The electrical measurements showed that RTO at 800 degreesC did not improve the oxide quality as compared to 1000 degreesC. (C) 2001 American I nstitute of Physics.