OMVPE growth of P-type GaN using solution Cp2Mg

Bis(cyclopentadienyl)magnesium(Cp2Mg) is a common source for p-type doping in GaN and AlInGaP materials. It is a white crystalline solid with very low vapor pressure, leading to transport problems similar to solid trimethyind ium (TMI). Some of these problems can be alleviated by a newly developed so urce-solution magnesocene, Cp2Mg, dissolved in a solvent that is essentiall y nonvolatile. In this paper, we report the growth and comparative results of Mg-doped GaN grown by OMVPE using solid and solution Cp2Mg. Using both s ources, we optimized parameters to obtain high-quality GaN growth with hole concentrations up to 1 x 10(18) /cm(3).