Propagation loss in single-mode GaAs-AlGaAs microring resonators: Measurement and model

We report propagation loss measurements in single-mode GaAs-AlGaAs racetrac k microresonators with bending radii from 2.7 mum to 9.7 mum. The experimen tal data were found to be in good agreement with a physical-loss model whic h accounts for the bending loss, the scattering loss due to surface roughne ss on the waveguide sidewalls, and the transition loss at the straight-to-b end waveguide junctions. The model also enables us to identify the dominant loss mechanisms in semiconductor microcavities. We found that for racetrac ks with large bending radii (greater than 4 mum, in our case) the loss due to surface-roughness scattering in the curved waveguides dominates, whereas for small-radius rings, the modal mismatch at the straight-to-bend wavegui de junctions causes the biggest loss. This result suggests that circular-sh aped rings are preferable in the realization of ultrasmall low-loss microca vities. We also show that the round-trip propagation loss in small-radius r acetrack microresonators can be minimized by introducing a lateral offset a t the straight-to-bend waveguide junctions.