Reverse dark resonance in Rb excited by a diode laser

Citation
J. Alnis et M. Auzinsh, Reverse dark resonance in Rb excited by a diode laser, J PHYS B, 34(20), 2001, pp. 3889-3898
Citations number
23
Categorie Soggetti
Physics
Journal title
JOURNAL OF PHYSICS B-ATOMIC MOLECULAR AND OPTICAL PHYSICS
ISSN journal
09534075 → ACNP
Volume
34
Issue
20
Year of publication
2001
Pages
3889 - 3898
Database
ISI
SICI code
0953-4075(20011028)34:20<3889:RDRIRE>2.0.ZU;2-4
Abstract
The origin of recently discovered reverse (opposite-sign) dark resonances h as been explained theoretically and verified experimentally. It is shown th at the reason for these resonances is a specific optical pumping of the gro und state magnetic sublevel in a transition when the ground state angular m omentum is smaller than the excited state momentum. An experiment was condu cted on Rb-85 atoms in a cell, when a diode laser using the ground state hy perfine level F-g = 3 simultaneously excites spectrally unresolved hyperfin e levels with total angular momentum quantum numbers F-e = 2, 3 and 4. It i s shown that due to differences in the transition probabilities the dominan t role in total absorption and fluorescence signals is played by absorption on a transition F-g = 3 --> F-e = 4.