ELECTRICAL CHARACTERIZATION OF THIN-FILM ELECTROLUMINESCENT DEVICES

Electrical characterization methods for the analysis of alternating cu rrent thin-film electroluminescent (ACTFEL) devices are reviewed. Part icular emphasis is devoted to electrical characterization techniques b ecause ACTFEL devices are electro-optic display devices whose performa nce is to a large extent determined by their electrical properties. A systematic procedure for ACTFEL electrical assessment is described. Th e utility of transient charge, voltage, current, and phosphor held ana lysis is explained. Steady-state electrical characterization methods d iscussed in this review include charge-voltage (Q-V), capacitance-volt age (C-V), internal charge-phosphor field (Q-F-p), and maximum charge- maximum applied voltage (Q(max)-V-max) analysis. These electrical char acterization methods are illustrated by reviewing relevant results obt ained from the analysis of evaporated ZnS:Mn and atomic layer epitaxy (ALE) SrS:Ce ACTFEL devices.