A. Recnik et al., Structure and chemistry of basal-plane inversion boundaries in antimony oxide-doped zinc oxide, J AM CERAM, 84(11), 2001, pp. 2657-2668
The atomic structure and the chemistry of basal-plane inversion boundaries
in Sb2O3-doped ZnO were investigated using quantitative transmission electr
on microscopy techniques. Electron microdiffraction and high-resolution tra
nsmission electron microscopy were used to determine the orientation of the
polar c-axis on both sides of the inversion boundary and the translation s
tate between the inverted ZnO domains. Quantitative energy-dispersive X-ray
spectroscopy combined with high-resolution transmission electron microscop
y allowed us to determine the exact amount and the arrangement of antimony
in the boundary layer. Inversion boundaries are head-to-head oriented with
a displacement vector of the oxygen sublattice of R-IB = 1/3[01 (1) over ba
r0] - 0.102[0001]. The boundary plane consists of a highly ordered SbZn2 mo
nolayer in which the cations occupy the octahedral interstices of the struc
ture. In the octahedral boundary layer, zinc and antimony atoms constitute
a honeycomb superstructure with a threefold (3m) in-plane symmetry.