Dielectric properties of zirconium oxide grown by atomic layer deposition from iodide precursor

ZrO2 films were grown from ZrI4 and H2O-H2O2 on p-Si(100) substrates using the atomic layer deposition technique. The influence of deposition conditio ns on the dielectric properties of ZrO2 films was investigated. The breakdo wn field exceeded 2 MV/cm in the films grown at 325-500 degreesC. The relat ive permittivity measured at 10 kHz was 20-24 in the films deposited at 275 -325 degreesC. The dissipation factor of these films was as low as 0.02-0.0 3. The relative permittivity decreased to 7 and the dissipation factor incr eased to 0.6 when the growth temperature was raised to 450-500 degreesC. Va riation of the measurement frequency from 1 to 100 kHz had only a slight in fluence on the permittivity values. Hysteresis of the capacitance-voltage c urves indicated that a considerable amount of deep levels at the oxide-semi conductor interface and/or in the oxide were recharged under dc bias. The d ensity of rechargeable states increased with the deposition temperature, an d the recharging mechanism also depended on the substrate temperature used for the ZrO2 growth. (C) 2001 The Electrochemical Society.