Interplay of voltage and temperature acceleration of oxide breakdown for ultra-thin oxides

Citation
E. Wu et al., Interplay of voltage and temperature acceleration of oxide breakdown for ultra-thin oxides, MICROEL ENG, 59(1-4), 2001, pp. 25-31
Citations number
9
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
59
Issue
1-4
Year of publication
2001
Pages
25 - 31
Database
ISI
SICI code
0167-9317(200111)59:1-4<25:IOVATA>2.0.ZU;2-F
Abstract
In this work, we unequivocally demonstrate that strong temperature dependen ce of time(charge)-to-breakdown T-BD/Q(BD) observed on ultra-thin oxides is not a thickness effect but rather a consequence of two experimental facts: (1) voltage-dependent voltage acceleration and (2) temperature-independent voltage acceleration within a fixed T-BD window. By extending down to -30 degreesC, we found non-Arrhenius temperature dependence is a totally indepe ndent effect. Based on our statistically accurate experimental database, we found that defect-generation rate and critical defect density as commonly measured using stress-induced leak-age current (SILC) only show a change of two orders of magnitude and no change, respectively. Weibull slopes are al so found to be temperature-independent. We propose an alternative model of two-step hydrogen degradation to explain these experimental results. (C) 20 01 Published by Elsevier Science B.V.