In this work we analyze the noise properties of the current at the hard-bre
akdown of a 6 nm thick oxide in an MOS structure. It is shown that in the q
uantum point contact case single fluctuators, probably consisting of electr
on traps inside the oxide, can be resolved, whereas the current noise at th
e thermal breakdown presents a 1/f spectrum, due to the averaging process b
etween many of these fluctuators. (C) 2001 Published by Elsevier Science B.
V.