Experimental study of low voltage anode hole injection in thin oxides

In the context of an assessment of the physical mechanisms governing thin o xide degradation, this paper reports an experimental investigation of anode hole injection (AHI) at low gate voltages (V-G) and of its correlation to SILC generation. A new technique based on carrier separation measurements i s introduced to interpret the behavior of the gate current (I-G) during con stant V-G stress experiments. Our results indicate that AHI is still operat ive at lower /V-G/ than previously thought, (C) 2001 Elsevier Science B.V. All rights reserved.