Citation
Wd. Zhang et al., Dependence of energy distributions of interface states on stress conditions, MICROEL ENG, 59(1-4), 2001, pp. 95-99
Citations number
13
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317
→ ACNP
Volume
59
Issue
1-4
Year of publication
2001
Pages
95 - 99
Database
ISI
SICI code
0167-9317(200111)59:1-4<95:DOEDOI>2.0.ZU;2-P
Abstract
This paper reports that the energy distribution of interface states has one
peak in each half of the bandgap, when they are generated without supplyin
g hydrogen to the SiO2-Si interface. By contrast, when hydrogen is availabl
e during the stress, only a single peak in the upper half of the gap is for
med. (C) 2001 Elsevier Science B.V. All rights reserved.