Modeling the breakdown and breakdown statistics of ultra-thin SiO2 gate oxides

A complete picture of breakdown is presented and compared with a full set o f experiments. First, an analytical model for the breakdown statistics is p roposed. This model is shown to have essentially the same predictive power as the percolation approach. Second, a hydrogen-based quantitative picture for the defect generation process is presented. A two-step mechanism consis ting in the release of protons from suboxide bonds at the anode interface a nd the subsequent reaction with oxygen vacancies is considered. A kinetic a pproach is followed to demonstrate the requirement of a parallel combinatio n of the rates corresponding to these two processes. The model is successfu lly compared with a complete set of breakdown measurements. (C) 2001 Elsevi er Science B.V. All rights reserved.