Compact quantum model for a silicon MOS tunnel diode

Authors
Vexler, MI Asli, N Shulekin, AF Meinerzhagen, B Seegebrecht, P
Citation
Mi. Vexler et al., Compact quantum model for a silicon MOS tunnel diode, MICROEL ENG, 59(1-4), 2001, pp. 161-166
Citations number
10
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
59
Issue
1-4
Year of publication
2001
Pages
161 - 166
Database
ISI
SICI code
0167-9317(200111)59:1-4<161:CQMFAS>2.0.ZU;2-M
Abstract
A simple model for the simulation of the potential distribution and tunnel currents in MOS structures with metal or poly-Si gate electrodes is propose d. Only the ground quantum state of particles near the Si/SiO2 interfaces i s considered. The model is applicable for all bias conditions and any dopin g density within Si and poly-Si. Good agreement with experimental data and more refined theories is demonstrated. (C) 2001 Elsevier Science B.V. All r ights reserved.