D. Ielmini et al., A new two-trap tunneling model for the anomalous stress-induced leakage current (SILC) in Flash memories, MICROEL ENG, 59(1-4), 2001, pp. 189-195
We present new experimental and numerical results on the leakage current in
Flash cells after cycling, showing that two markedly different behaviors c
an be identified. Most tail cells show a leakage current that can be succes
sfully described by single-trap tunneling. However, the unstable and very h
igh leakage exhibited by a few anomalous cells requires a different explana
tion. An improved physical model including two-trap tunneling processes can
account for the large current enhancement in the anomalous cells, as well
as explaining for the first time their asymmetric and erratic behavior. (C)
2001 Published by Elsevier Science B.V.