NROM (TM) - a new non-volatile memory technology: from device to products

Citation
I. Bloom et al., NROM (TM) - a new non-volatile memory technology: from device to products, MICROEL ENG, 59(1-4), 2001, pp. 213-223
Citations number
2
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
59
Issue
1-4
Year of publication
2001
Pages
213 - 223
Database
ISI
SICI code
0167-9317(200111)59:1-4<213:N(-ANN>2.0.ZU;2-X
Abstract
NROM (TM) - a new NVM technology has recently been introduced, enabling thr ee major improvements relative to the floating gate technology: one technol ogy for all NVM products (Flash, EEPROM, ROM and Embedded), higher density (2.5F(2) per bit in flash) and simple process with reduced number of masks without any exotic materials. The NROM (TM) cell is based on localized char ge trapping above the junction edge, enabling physically separated two bits per cell. Performance of new NVM NROM (TM) based products show endurance u p to 100 K with retention of 10 years at 150 degreesC. (C) 2001 Elsevier Sc ience B.V. All rights reserved.