Compact poly-CMP embedded flash memory

In this paper, the compact poly-CMP cell concept is presented as a good can didate for scaled embedded flash memory in future mainstream CMOS technolog ies, In this compact cell concept the access gate is placed next to the sta cked gate transistor. The access gate has a flat top surface due to the use of chemical mechanical polishing (CMP) and therefore no depth of focus pro blems with the exposure of the access gate mask occur. The feasibility is p roven by electrical results on mini arrays in 0.25-mum CMOS technology. Bot h Fowler-Nordheim tunneling and source side injection programming is possib le. The program and erase degradation is investigated by endurance cycling. (C) 2001 Elsevier Science BY All rights reserved.