BipFLASH: A novel non-volatile memory cell concept for high-speed, low-power applications

Authors
Esseni, D Selmi, L
Citation
D. Esseni et L. Selmi, BipFLASH: A novel non-volatile memory cell concept for high-speed, low-power applications, MICROEL ENG, 59(1-4), 2001, pp. 231-236
Citations number
6
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
59
Issue
1-4
Year of publication
2001
Pages
231 - 236
Database
ISI
SICI code
0167-9317(200111)59:1-4<231:BANNMC>2.0.ZU;2-G
Abstract
We present a novel non-volatile memory cell architecture, which remarkably improves injection efficiency over conventional channel hot electron progra mming. We show how this superior performance can be traded to achieve eithe r low voltage-low power or high-speed operation. The cell concept is valida ted by means of numerical device simulations. Criteria for device optimizat ion are also discussed. (C) 2001 Elsevier Science B.V. All rights reserved.