Simple techniques are proposed to extract the oxide thickness from C(V) cha
racteristics in the nanometer range. A first comparative method using no fi
tting parameter allows the oxide thickness extraction by comparison to a re
ference sample on the same technology. In a second method, the oxide thickn
ess is directly extracted assuming one parameter (associated to the carrier
statistics). Both techniques are experimentally and theoretically justifie
d. (C) 2001 Elsevier Science B.V. All rights reserved.