G. Lucovsky et al., A molecular orbital model for the electronic structure of transition metalatoms in silicate and aluminate alloys, MICROEL ENG, 59(1-4), 2001, pp. 329-334
This paper develops a molecular orbital, MO, model that demonstrates that t
he electronic structure of non-crystalline oxide dielectrics depends primar
ily on (i) the coordination and symmetry of transition metal atoms and (ii)
the orbital energies of their oxygen neighbors. The calculations indicate
that the anti-bonding d-states which determine the minimum energy gap and t
he conduction band offset energy with respect to Si are a local property of
the transition metal-oxygen bonding and are insensitive to second neighbor
alloy atoms such as Si or Al. (C) 2001 Elsevier Science B.V. All rights re
served.