A molecular orbital model for the electronic structure of transition metalatoms in silicate and aluminate alloys

Citation
G. Lucovsky et al., A molecular orbital model for the electronic structure of transition metalatoms in silicate and aluminate alloys, MICROEL ENG, 59(1-4), 2001, pp. 329-334
Citations number
14
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
59
Issue
1-4
Year of publication
2001
Pages
329 - 334
Database
ISI
SICI code
0167-9317(200111)59:1-4<329:AMOMFT>2.0.ZU;2-7
Abstract
This paper develops a molecular orbital, MO, model that demonstrates that t he electronic structure of non-crystalline oxide dielectrics depends primar ily on (i) the coordination and symmetry of transition metal atoms and (ii) the orbital energies of their oxygen neighbors. The calculations indicate that the anti-bonding d-states which determine the minimum energy gap and t he conduction band offset energy with respect to Si are a local property of the transition metal-oxygen bonding and are insensitive to second neighbor alloy atoms such as Si or Al. (C) 2001 Elsevier Science B.V. All rights re served.