Ultrathin high-K metal oxides on silicon: processing, characterization andintegration issues

Authors
Gusev, EP Cartier, E Buchanan, DA Gribelyuk, M Copel, M Okorn-Schmidt, H D'Emic, C
Citation
Ep. Gusev et al., Ultrathin high-K metal oxides on silicon: processing, characterization andintegration issues, MICROEL ENG, 59(1-4), 2001, pp. 341-349
Citations number
39
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
59
Issue
1-4
Year of publication
2001
Pages
341 - 349
Database
ISI
SICI code
0167-9317(200111)59:1-4<341:UHMOOS>2.0.ZU;2-V
Abstract
An overview of our recent work, on ultrathin (< 100 Angstrom) films of meta l oxides deposited on silicon for advanced gate dielectrics applications wi ll be presented. Data on ultrathin Al2O3, ZrO2, HfO2, and Y2O3 will be show n to illustrate the complex processing, integration and device-related issu es for high dielectric constant ('high-K') materials. Both physical and ele ctrical properties, as well as the effects of pre- and post-deposition trea tments will be discussed. (C) 2001 Elsevier Science B.V. All rights reserve d.