High mobility HfO2 n- and p-channel transistors

High permittivity HfO2 films have been deposited directly on silicon using the thermal decomposition of the hafnium nitrato precursor Hf(NO3)(4). Thes e films were then used to build n- and p-channel field effect transistors. N+ poly, P+ poly, and Pt have been used as gate electrodes. The mobility of the poly gate devices is comparable to that of SiO2/Si, however, these dev ices show a thicker equivalent oxide thickness than the Pt devices. The eff ect of the composition of the films on their electrical performance is disc ussed. (C) 2001 Elsevier Science B.V. All rights reserved.