T. Dittrich et al., Defect transformation under growth of submonolayer oxides on silicon surfaces at low temperatures, MICROEL ENG, 59(1-4), 2001, pp. 399-404
The defect transformation under growth of submonolayer oxides on silicon su
rfaces is studied in situ on reconstructed Si(100)-2 x 1 and Si(111)-7 x 7
surfaces and on hydrogenated Si surfaces of Si nanocrystallites. The method
s of the quenching of the photoluminescence of bulk c-Si due to surface rec
ombination and of the infrared free carriers absorption in mesoporous Si ar
e used. It is shown that dangling bonds at Si-Si dimers are not recombinati
on active. Non-radiative surface defects are generated during the earliest
stages of oxidation. The generation of hole traps is tightly related to an
increase of physisorbed H2O at hydrogenated Si surfaces during the native o
xidation. (C) 2001 Elsevier Science B.V. All rights reserved.