Studies of mist deposited high-k dielectrics for MOS gates

This paper presents the results of the characterization of high-k dielectri c films deposited by liquid source misted chemical deposition (LSMCD) in a cluster tool for advanced MOS gates. Electrical characterization (capacitan ce-voltage and current-voltage) was performed in conjunction with atomic fo rce microscopy (AFM). The effects of in situ surface conditioning prior to deposition were also examined. Among processes investigated, the sequence d epositing high-k dielectric, e.g. SrTa2O6, on nitrided oxide interlayer gro wn by a UV/NO process showed very good promise. (C) 2001 Published by Elsev ier Science B.V.