Measurements of low field mobility in ultra-thin SOI n- and p-MOSFETs

Low-field electron and hole effective mobilities (mu (eff)) of ultra-thin S OI n- and p-MOSFETs, down to a silicon thickness T-si of approximately 5 nm , have been measured at different temperatures using a special test structu re able to circumvent parasitic resistance effects. At large inversion dens ities (N-inv), ultra-thin SOI exhibit higher mobility than heavily doped bu lk MOS and a weak dependence of mobility on silicon thickness. However, at small N-inv, the mobility is clearly reduced for decreasing T-Si, due to en hanced phonon scattering in the thin quantum well. (C) 2001 Elsevier Scienc e B.V. All rights reserved.