Single-electron and quantum SOI devices

This paper describes, from the viewpoint of device fabrication, single-elec tron and quantum devices using silicon-on-insulators (SOIs). We point out t hat control of the oxidation of Si is quite important and could be the key to their fabrication. We also introduce our technique for making single-ele ctron transistors (SETs), which uses special phenomena that occur during th e oxidation of SOIs, and show that the technique enables us to realize prim ary single-electron circuits as a result of its high controllability and hi gh reproducibility. (C) 2001 Elsevier Science B.V. All rights reserved.