Electrical evaluation of innovating processes for improving SOS materials

Recent variants of silicon on sapphire films, prepared using three techniqu es (solid-phase epitaxial regrowth, two-step epitaxial growth and double im plant), are investigated in terms of material and device properties. The ps eudo-MOSFET analysis shows that the threshold voltage, electron mobility an d trap density at the back Si-Al2O3 interface are greatly improved by the n ew processes. The results are confirmed by device characterization, which s hows good properties of the front-channel and Si-SiO2 interface and low sho rt-channel effects in doped and 'undoped' MOSFETs. (C) 2001 Elsevier Scienc e B.V. All rights reserved.