Thermal effect of 0.1 mu m partially depleted SOICMOSFET

This work investigates the floating body effect (FBE) on the partially depl eted SOI devices at various temperatures for high-performance 0.1 mum MOSFE T. The thermal effect on the device's characteristics was investigated with respect to the body contacted MOSFET (BC-SOI) and floating body MOSFET wit hout body contacted (FB-SOI). It is found that the threshold voltage (V-th) and the off state drain current (I-OFF) of the BC-SOI devices are more tem perature sensitive than those of the FB-SOI devices. For operation at highe r temperatures, there is no apparent difference in driving capability betwe en the BC-SOI and FB-SOI MOSFETs. (C) 2001 Elsevier Science B.V. All rights reserved.