The narrow-channel effects (NCE) and their impact on the floating body effe
cts (FBEs) are investigated by various static and dynamic measurements in b
oth LOCOS and STI isolated devices. It is found that FBEs are reduced in na
rrow channel devices for both isolation technologies. Two possible mechanis
ms are found to be consistent with our results: a carrier lifetime degradat
ion on the sidewalls or an increase of the source/body junction leakage on
the edges. Both mechanisms are discussed on the basis of our experimental r
esults and on previous studies in bulk or SOI devices. (C) 2001 Elsevier Sc
ience B.V. All rights reserved.