Channel-width dependence of floating body effects in STI- and LOCOS-isolated MOSFETS

Citation
J. Pretet et al., Channel-width dependence of floating body effects in STI- and LOCOS-isolated MOSFETS, MICROEL ENG, 59(1-4), 2001, pp. 483-488
Citations number
9
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
59
Issue
1-4
Year of publication
2001
Pages
483 - 488
Database
ISI
SICI code
0167-9317(200111)59:1-4<483:CDOFBE>2.0.ZU;2-F
Abstract
The narrow-channel effects (NCE) and their impact on the floating body effe cts (FBEs) are investigated by various static and dynamic measurements in b oth LOCOS and STI isolated devices. It is found that FBEs are reduced in na rrow channel devices for both isolation technologies. Two possible mechanis ms are found to be consistent with our results: a carrier lifetime degradat ion on the sidewalls or an increase of the source/body junction leakage on the edges. Both mechanisms are discussed on the basis of our experimental r esults and on previous studies in bulk or SOI devices. (C) 2001 Elsevier Sc ience B.V. All rights reserved.