Trapping dependent H+ motion in SIMOX buried oxides

The transport characteristics of mobile H+ ions are examined in SIMOX burie d oxides. The H+ ions are created in the buried oxides by annealing in H-2 gas. The effects of applied oxide field and H+ concentration are investigat ed in order to develop a model for the mechanism of the H+ motion. Results suggest the H+ motion across the oxide is limited by the detrapping of the mobile charges from defects located near the top Si/SiO2 and substrate Si/S iO2 interfaces. Comparisons of the samples annealed under differing conditi ons indicate that the H+ trapping defects are created and/or modified durin g the hydrogenation. (C) 2001 Elsevier Science B.V. All rights reserved.