Reversed electron-hole pair transport in SOI structure

Authors
Dobrovolsky, VN Ishchuk, LV Ninidze, GK
Citation
Vn. Dobrovolsky et al., Reversed electron-hole pair transport in SOI structure, MICROEL ENG, 59(1-4), 2001, pp. 509-513
Citations number
5
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
59
Issue
1-4
Year of publication
2001
Pages
509 - 513
Database
ISI
SICI code
0167-9317(200111)59:1-4<509:REPTIS>2.0.ZU;2-X
Abstract
Calculation of electron-hole pair drift velocity in silicon is represented. It was shown that the reversed pair drift must take place in n-silicon. Th e silicon-on-insulator structure was used for the reversed drift observatio n. (C) 2001 Elsevier Science B.V. All rights reserved.